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| FDV305N January 2003 FDV305N 20V N-Channel PowerTrench MOSFET General Description This 20V N-Channel MOSFET uses Fairchild's high voltage PowerTrench process. It has been optimized for power management applications. Features * 0.9 A, 20 V RDS(ON) = 220 m @ VGS = 4.5 V RDS(ON) = 300 m @ VGS = 2.5 V * Low gate charge * Fast switching speed * High performance trench technology for extremely low RDS(ON) Applications * * * Load switch Battery protection Power management D D S SOT-23 G G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation TA=25oC unless otherwise noted Parameter Ratings 20 12 0.9 2 0.35 -55 to +150 Units V V A W C Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient 357 C/W Package Marking and Ordering Information Device Marking 305 Device FDV305N Reel Size 7'' Tape width 8mm Quantity 3000 units 2003 Fairchild Semiconductor Corporation FDV305N Rev D (W) FDV305N Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSSF IGSSR TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 A Min 20 Typ Max Units V Off Characteristics ID = 250 A,Referenced to 25C VDS = 16 V, VGS = 12 V, VGS = -12 V, VGS = 0 V VDS = 0 V VDS = 0 V 15 1 100 -100 mV/C A nA nA On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance ID = 250 A VDS = VGS, ID = 250 A,Referenced to 25C ID = 0.9 A VGS = 4.5 V, ID = 0.7 A VGS = 2.5 V, VGS = 4.5V, ID = 0.9 A, TJ = 125C VGS = 4.5V, VDS = 5 V VDS = 5V, ID = 0.9 A 0.6 1 -3 164 235 220 1.5 V mV/C 220 300 303 m ID(on) gFS 1 3 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 10 V, f = 1.0 MHz V GS = 0 V, 109 30 14 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 10 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 4.5 7 8 1.4 9 14 16 2.8 1.5 ns ns ns ns nC nC nC VDS = 10 V, VGS = 4.5 V ID = 0.9 A, 1.1 0.26 0.26 Drain-Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Notes: 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IF = 0.9 A, diF/dt = 100 A/s IS = 0.29 A 0.75 7.4 2.2 0.29 1.2 A V nS nC FDV305N Rev D (W) FDV305N Typical Characteristics 2 VGS = 4.5V 3.0V 1.8 2.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 ID, DRAIN CURRENT (A) 1.5 VGS = 2.5V 1.4 1 2.0V 1.2 3.0V 3.5V 4.0V 4.5V 0.5 1 0 0 0.5 1 1.5 2 VDS, DRAIN TO SOURCE VOLTAGE (V) 0.8 0 0.5 1 ID, DRAIN CURRENT (A) 1.5 2 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.6 RDS(ON), ON-RESISTANCE (OHM) ID = 0.5A 0.5 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 0.9A VGS = 4.5V 1.4 1.2 0.4 TA = 125 C o o 1 0.3 TA = 25 C 0.2 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 0.1 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 2.5 TA = -55oC 125 C o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 VGS = 0V 25 C o IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) 2 1 TA = 125 C 25 C o o 1.5 0.1 1 0.01 -55 C o 0.5 0.001 0 0.5 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDV305N Rev D (W) FDV305N Typical Characteristics 5 VGS, GATE-SOURCE VOLTAGE (V) ID = 0.9A VDS = 5V 10V 150 CISS 120 CAPACITANCE (pF) f = 1 MHz VGS = 0 V 4 15V 3 90 2 60 COSS 30 1 CRSS 0 0 0.5 1 1.5 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 10 RDS(ON) LIMIT Figure 8. Capacitance Characteristics. 5 P(pk), PEAK TRANSIENT POWER (W) SINGLE PULSE RJA = 357C/W TA = 25C ID, DRAIN CURRENT (A) 100s 1 1ms 10ms 100ms 1s 0.1 VGS = 4.5V SINGLE PULSE o RJA = 357 C/W TA = 25 C 0.01 0.1 1 10 100 o 4 3 DC 2 1 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA = 357 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 o 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. FDV305N Rev D (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTa CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power Franchise Programmable Active Droop DISCLAIMER ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogica TruTranslation UHC UltraFETa VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I2 |
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